Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF2+, and As+ ion implanted junctions

Journal of Electronic Materials

Volumn 27, Issue 12, 1998, Pages 1296-1314

  Downey, Daniel F ^a   Marcus, Steven D ^b   Chow, Judy W ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b STEAG AST Elektronik   (United States)

Author keywords

Boron shallow junctions; Ion implants; Rapid thermal annealing (RTA); Sheet resistance

Indexed keywords

ARSENIC; BORON COMPOUNDS; ION IMPLANTATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; TRANSMISSION ELECTRON MICROSCOPY;

SHEET RESISTANCE; SPREADING RESISTANCE PROFILING (SRP);

SEMICONDUCTOR JUNCTIONS;

EID: 0032294248     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0089-0     Document Type: Article

References (18)

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