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Volumn 457-460, Issue II, 2004, Pages 1263-1268

The SiC-SiO2 interface: A unique advantage of SiC as a wide energy-gap material

Author keywords

Gate oxide; Generation rate; Interface defects; MOS capacitors; MOSFETs; Nitridation; Nonvolatile memory; Surface generation

Indexed keywords

DIELECTRIC DEVICES; ENERGY GAP; INTERFACES (MATERIALS); MOS CAPACITORS; MOSFET DEVICES; PROBLEM SOLVING;

EID: 4444259981     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.