MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC

Microelectronics Reliability

Volumn 42, Issue 3, 2002, Pages 455-458

  Chakraborty, S ^a   Lai, P T ^a   Kwok, P C K ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b OPEN UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); NITROGEN OXIDES; SILICA; SILICON CARBIDE; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

WIDE-BAND GAP SEMICONDUCTORS;

MOS DEVICES;

EID: 0036496492     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00220-7     Document Type: Article

References (9)

1. 2 grown on SiC by rapid thermal processing
2. 2O nitrided oxides grown on Si and SiC substrates
3. Nitridation of silicon-dioxide films grown on 6H silicon carbide
4. 2 grown on p-type 4H-SiC
5. 2O-grown oxynitride on 6H-SiC
6. 2/SiC MOS system and MOSFET's
7. 2O
8. The nature and distribution of nitrogen in silicon oxynitride grown on silicon in a nitric oxide ambient