Investigation of electron-hole generation in MOS capacitors on 4H SiC

IEEE Transactions on Electron Devices

Volumn 50, Issue 6, 2003, Pages 1433-1439

  Cheong, Kuan Yew ^a,b   Dimitrijev, Sima ^a   Han, Jisheng ^a  

^a GRIFFITH UNIVERSITY   (Australia)

^b Universiti Sains Malaysia Transkrian Engineering Campus   (Malaysia)

Author keywords

Bulk carrier generation; Charge retention time; Interface trap density; MOS capacitor; Surface carrier generation

Indexed keywords

CHARGE CARRIERS; ELECTRON TRAPS; GATES (TRANSISTOR); HIGH TEMPERATURE PROPERTIES; INTERFACES (MATERIALS); SEMICONDUCTOR GROWTH; SILICON CARBIDE;

SURFACE CARRIERS;

MOS CAPACITORS;

EID: 0041698414     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813346     Document Type: Article

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