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Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3421-3423

Charge retention in metal-oxide-semiconductor capacitors on SiC used as nonvolatile-memory elements

(4) Dimitrijev, Sima a Cheong, Kuan Yew a Han, Jisheng a Harrison, H Barry a

a GRIFFITH UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LEAKAGE; CHARGE RETENTION; GATE OXIDE; GENERATION RATE; MEMORY ELEMENT; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NITRIDED; NON-VOLATILE RANDOM-ACCESS MEMORIES; RETENTION TIME; ROOM TEMPERATURE; THEORETICAL LIMITS;

DIELECTRIC DEVICES; MOS CAPACITORS; RANDOM ACCESS STORAGE; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956048036 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1476060 Document Type: Article

Times cited : (16)

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