MOS capacitor on 4H-SiC as a nonvolatile memory element

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 404-406

  Cheong, Kuan Yew ^a,b   Dimitrijev, Sima ^a,b  

^a IEEE   (Australia)

^b GRIFFITH UNIVERSITY   (Australia)

Author keywords

Carrier generation; Charge retention time; MOS capacitor; Nitridation; Nonvolatile memory; Random access memory (RAM)

Indexed keywords

CARRIER GENERATION; CHARGE RETENTION TIME; NITRIDATION;

ACTIVATION ENERGY; CAPACITANCE MEASUREMENT; ELECTRIC CHARGE; ELECTRIC SURGES; EXTRAPOLATION; INTERFACES (MATERIALS); MOS CAPACITORS; NITRIDING; NONVOLATILE STORAGE; OXIDES; RANDOM ACCESS STORAGE; VOLTAGE MEASUREMENT;

SILICON CARBIDE;

EID: 0036646339     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015217     Document Type: Article

References (10)

1. Dielectrics in microelectronics-problems and perspectives
2. Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices
3. Statistics of the recombination of holes and electrons
4. The potential of diamond & SiC electronic devices for microwave and power applications
5. Dynamic charge storage in 6H silicon carbide
6. A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications
7. 2Si interfaces by x-ray photoelectron spectroscopy
8. 2O and NO-nitrided gate oxides grown on 4H SiC
9. Effects of nitridation in gate oxides grown on 4H-SiC