Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC

Microelectronics Reliability

Volumn 40, Issue 2, 2000, Pages 283-286

  Li, Hui Feng ^a   Dimitrijev, Sima ^a   Sweatman, Denis ^a   Harrison, H Barry ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; NITRIDING; NITROGEN OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SILICON CARBIDE; THERMOANALYSIS;

FOWLER-NORDHEIM INJECTION;

GATES (TRANSISTOR);

EID: 0033892024     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00234-6     Document Type: Article

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