Transport properties of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

Solid-State Electronics

Volumn 52, Issue 6, 2008, Pages 973-979

  Kordos P ^a,b   Gregusova D ^a   Stoklas, R ^a   Gaži, Š ^a   Novak J ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

AlGaN GaN MOSHFETs

Indexed keywords

ALUMINUM GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; TRANSCONDUCTANCE;

FREQUENCY DISPERSION; METAL-OXIDE-SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (MOSHFET).; TRAPS REDUCTION;

MOSFET DEVICES;

EID: 42749096765     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.01.028     Document Type: Article

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