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Volumn 4, Issue 7, 2007, Pages 2720-2723
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Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide
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Author keywords
[No Author keywords available]
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Indexed keywords
ALGAN/GAN;
METAL-OXIDE SEMICONDUCTORS;
NITRIDE SEMICONDUCTORS;
ALUMINUM;
CHEMICAL VAPOR DEPOSITION;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
GALLIUM NITRIDE;
METALS;
NITRIDES;
SEMICONDUCTOR MATERIALS;
TRANSISTORS;
FIELD EFFECT TRANSISTORS;
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EID: 42749089232
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200674828 Document Type: Conference Paper |
Times cited : (12)
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References (16)
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