Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaNGaN high electron mobility transistor characteristics

Applied Physics Letters

Volumn 88, Issue 4, 2006, Pages 1-3

  Nanjo, Takuma ^a   Oishi, Toshiyuki ^a   Suita, Muneyoshi ^a   Abe, Yuji ^a   Tokuda, Yasunori ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS; SCHOTTKY BARRIER DIODES; TRANSCONDUCTANCE;

GATE LEAKAGE CURRENT; TRAP REDUCTION;

ALUMINUM COMPOUNDS;

EID: 31544441027     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168036     Document Type: Article

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