Influence of thermal annealing on oxidation states of Al-oxide in spin tunneling junctions

Journal of Magnetism and Magnetic Materials

Volumn 303, Issue 1, 2006, Pages 256-260

  Kaiju, Hideo ^a,b   Otaka, Yuki ^a   Shiiki, Kazuo ^a  

^a KEIO UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Al oxide; Annealing; Dielectric constant; Ion beam sputtering; Spin tunneling junctions

Indexed keywords

ALUMINUM; ANNEALING; OXIDATION; OXIDES; PERMITTIVITY; THERMAL EFFECTS;

AL-OXIDE; DIELECTRIC MEASUREMENT; ION-BEAM SPUTTERING; SPIN TUNNELING JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 33645987296     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2005.11.017     Document Type: Article

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