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Volumn 98, Issue 6, 2005, Pages

Comparison of low-temperature GaN, SiO 2, and SiN x as gate insulators on AlGaNGaN heterostructure field-effect transistors

(9) Kao, C J a Chen, M C a Tun, C J a Chi, G C a Sheu, J K b Lai, W C b Lee, M L b Ren, F c Pearton, S J c

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE INSULATORS; UNCAPPED SURFACES;

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LOW TEMPERATURE OPERATIONS; PASSIVATION; SILICON;

GALLIUM NITRIDE;

EID: 26244456541 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2058173 Document Type: Article

Times cited : (27)

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