Interfacial properties of SiO2 grown on 4H-SiC: Comparison between N2O and wet O2 oxidation ambient

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 979-982

  Poggi, Antonella ^a   Moscatelli, Francesco ^a,b   Scorzoni, Andrea ^a,b   Marino, Giovanni ^a   Nipoti, Roberta ^a   Sanmartin, Michele ^a  

^a CNR   (Italy)

^b UNIVERSITY OF PERUGIA   (Italy)

Author keywords

4H SiC; C V; N2O; Oxidation; Oxide SiC interface; Slow trap profile

Indexed keywords

CONDUCTION BANDS; ELECTRON TRAPS; ELECTROOXIDATION; ENERGY GAP; INTERFACES (MATERIALS); SILICA;

CARBIDE-SILICON DIOXIDE INTERFACES; INTERFACE STATE DENSITY; OXIDE QUALITY; SLOW TRAP PROFILES;

SEMICONDUCTOR GROWTH;

EID: 33748896707     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.979     Document Type: Conference Paper

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