Electron transport modeling in the inversion layers of 4H and 6H-SiC MOSFETs on implanted regions

Solid-State Electronics

Volumn 49, Issue 6, 2005, Pages 1017-1028

  Zeng, Yu Anne ^a   White, Marvin H ^a   Das, Mrinal K ^b  

^a LEHIGH UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Inversion; Mobility; MOSFETs; Quantum mechanical; SiC

Indexed keywords

CHARACTERIZATION; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRON TRANSITIONS; INTERFACES (MATERIALS); QUANTUM THEORY; SILICA; SILICON CARBIDE; SURFACE ROUGHNESS;

COULOMB SCATTERING; ELECTRON SATURATION VELOCITY; INVERSION; MOBILITY; SIC;

MOSFET DEVICES;

EID: 18844366669     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.03.002     Document Type: Article

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