6H silicon carbide MOSFET modelling for high temperature analogue integrated circuits (25-500°C)

IEE Proceedings: Circuits, Devices and Systems

Volumn 143, Issue 2, 1996, Pages 115-122

  Rebello, N S ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

High temperature fosfets; High temperature opamps; Silicon carbide circuits

Indexed keywords

LEAKAGE CURRENTS; MESFET DEVICES; MOS DEVICES; OPERATIONAL AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; TRANSCONDUCTANCE;

HIGH TEMPERATURE ANALOGUE INTEGRATED CIRCUITS; HIGH TEMPERATURE INTEGRATED ELECTRONICS; SILICON CARBIDE CIRCUITS; ZERO TEMPERATURE COEFFICIENT;

MOSFET DEVICES;

EID: 0030126428     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19960092     Document Type: Article

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