Defect-engineering in SiC by ion implantation and electron irradiation

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 146-149

  Pensl, G ^a   Ciobanu, F ^a   Frank, T ^a   Kirmse, D ^a   Krieger, M ^a   Reshanov, S ^a   Schmid, F ^a   Weidner, M ^a   Ohshima, T ^b   Itoh, H ^b   Choyke, W J ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Defect centers; Electron irradiation; Ion implantation.

Indexed keywords

COBALT; ELECTRIC PROPERTIES; ELECTRON IRRADIATION; ION IMPLANTATION; MOS CAPACITORS; NITROGEN; OXIDATION;

DEFECT CENTERS; N DONORS;

SILICON CARBIDE;

EID: 30344461892     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.040     Document Type: Conference Paper

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