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Volumn 389-393, Issue , 2002, Pages 1109-1112
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Low-temperature thermal oxidation of lon-amorphized 6H-SiC
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Author keywords
Annealing; Ion implantation; Oxidation; RBS channeling; TEM
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Indexed keywords
ANNEALING;
GROWTH RATE;
ION IMPLANTATION;
IONS;
OXIDATION;
REACTION INTERMEDIATES;
TEMPERATURE;
THERMOOXIDATION;
TRANSMISSION ELECTRON MICROSCOPY;
AMORPHOUS MATERIALS;
HYDROGEN;
LOW TEMPERATURE OPERATIONS;
POLYCRYSTALLINE MATERIALS;
RECRYSTALLIZATION (METALLURGY);
IMPLANTED SAMPLES;
INTERMEDIATE TEMPERATURES;
LOW TEMPERATURES;
OXIDATION TEMPERATURE;
POLYCRYSTALLINE;
RBS/CHANNELING;
TEMPERATURE RANGE;
THERMAL OXIDATION;
SILICON CARBIDE;
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EID: 0036430579
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.1109 Document Type: Conference Paper |
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Times cited : (8)
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References (7)
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