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Volumn 556-557, Issue , 2007, Pages 651-654
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Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation
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Author keywords
Amorphization; Capacitance to voltage measurement; Interface state density; Metal oxide semiconductor capacitor; Nitrogen ion implantation; Wet oxidation
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Indexed keywords
AMORPHIZATION;
CAPACITANCE;
CHARGE COUPLED DEVICES;
DIELECTRIC DEVICES;
FABRICATION;
INTERFACE STATES;
ION IMPLANTATION;
IONS;
METALS;
OXIDATION;
OXIDE SEMICONDUCTORS;
SILICON CARBIDE;
WIDE BAND GAP SEMICONDUCTORS;
DENSITY OF INTERFACE STATE;
FLAT-BAND VOLTAGE;
INTERFACE STATE DENSITY;
METAL-OXIDE-SEMICONDUCTOR CAPACITORS;
NITROGEN ION IMPLANTATIONS;
OXIDATION PROCESS;
VALENCE BAND EDGES;
WET OXIDATION;
MOS CAPACITORS;
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EID: 38449112566
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.556-557.651 Document Type: Conference Paper |
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Times cited : (3)
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References (11)
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