Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 639-642

  Poggi, Antonella ^a   Moscatelli, Francesco ^a   Hijikata, Yasuto ^b   Solmi, Sandro ^a   Sanmartin, Michele ^a   Tamarri, Fabrizio ^a   Nipoti, Roberta ^a  

^a CNR   (Italy)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

Interface states; MOS capacitors; Nitrogen implantation

Indexed keywords

CAPACITANCE; DIELECTRIC DEVICES; FABRICATION; MOS CAPACITORS; OXIDATION; SILICA; SILICON CARBIDE; SILICON OXIDES;

CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTION BAND EDGE; DENSITY OF INTERFACE STATE; IMPLANTATION DOSE; INTERFACE PROPERTY; INTERFACE STATE DENSITY; NITROGEN IMPLANTATION; POSITIVE CHARGES;

INTERFACE STATES;

EID: 38449091394     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.639     Document Type: Conference Paper

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