A continuous analytic I-V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach

Semiconductor Science and Technology

Volumn 21, Issue 3, 2006, Pages 261-266

  He, Jin ^a   Chan, Mansun ^b   Zhang, Ganggang ^a   Zhang, Xing ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; MOSFET DEVICES; POISSON EQUATION;

POISSON-BOLTZMANN EQUATIONS; POLY-DEPLETION EFFECTS; QUANTUM-MECHANICAL EFFECTS; ULTRA-THIN-BODY SILICON-ON-INSULATOR (UTB-SOI) MOSFET;

SILICON ON INSULATOR TECHNOLOGY;

EID: 32844468954     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/008     Document Type: Article

References (20)

1. Choi Y K, Asano K, Lindert N, Subramarian V, King T J, Bokor J and Hu C 2000 Ultrathin-body SOI MOSFET for deep-sub-tenth micron era IEEE Electron Device Lett. 21 254-5
2. Uchida K, Watanabe H, Kinosshita A, Koga J, Numata T and Takagi S 2002 Experimental study on carrier transport mechanisms in ultrathin body SOI n- and p-MOSFET with SOI thickness less than 5 νm IEDM Tech. Dig. pp 47-50
3. Tezuka T, Sugiyama N, Mizuno T and Takagi S 2003 Ultra thin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels IEEE Trans. Electron Devices 50 1328-30
4. Choi J H, Park Y J and Min H S 1995 Electron mobility behavior in extremely thin SOI MOSFETs IEEE Electron Device Lett. 16 527-9
5. Esseni D, Abramo A, Selmi L and Sangiorgi E 2003 Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs IEEE Trans. Electron Devices 50 2445-54
6. Luyken R J, Schulz T, Hartwich J, Dreeskornfeld L, Stadele M and Rosner W 2003 Design considerations for fully depleted SOI transistors in the 25-50 nm gate length regime Solid-State Electron. 47 1199-203
7. An X, Huang R, Zhao B, Zhang X and Wang Y 2004 Design guideline of an ultra-thin body SOI MOSFET for low-power and high-performance applications Semicond. Sci. Technol. 19 347-50
8. Ahn C G, Cho W J, Im K J, Yang J H, Baek I B, Baek S K and Lee S J 2004 Recessed source-drain (S/D) SO1 MOSFETs with low S/D extension (SDE) external resistance 2004 IEEE International SO1 Conference (USA) pp 207-8
9. An X, Huang R, Zhang X and Wang Y 2005 Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs Solid-State Electron. 49 479-83
10. Schulz T et al 2004 Impact of technology parameters on device performance of UTB-SOI CMOS Solid-State Electron. 48 521-7
11. Fossum J G, Ge L, Chiang M-H, Trivedi V P, Chowdhury M M, Mathew L, Workman G O and Nguyen B-Y 2004 The process/physics-based compact model for non-classical CMOS device and circuit design Solid-State Electron. 48 919-26
12. Kim S-H and Fossum J G 2005 The nanoscale CMOS: potential non-classical technologies versus a hypothetical bulk-silicon technology Solid-State Electron. 49 595-605
13. Pacha C, Schmal A, Schulz T, Gottsche R and Steinhogl W 2003 Evaluation of circuit performance of ultra-thin-body SOI CMOS Solid-State Electron. 47 1205-11
14. Taur Y, Liang X, Wang W and Lu H 2004 A continuous analytic drain-current model for DG MOSFETs IEEE Electron Device Lett. 25 107-9
15. SRC 2003 Research needs for semiconductor device compact modeling
16. He J, Zhang X, Zhang G and Wang Y 2006 Complete carrier-based non-charge-sheet analytic theory for nano-scale undoped surrounding-gate MOSFETs IEEE Int. Symp. on Quality of Electronic Design, Proc. ISQED (San Jose, USA)
17. He J, Chan M, Zhang X and Wang Y 2006 Carrier-based approach: a generous strategy to develop compact model of non-classical CMOS IEEE of ICCDCS (Playa del Carmen, Mexico)
18. He J, Chan M, Zhang X and Wang Y 2005 Complete carrier-based non-charge-sheet analytic model for nano-scale undoped symmetric double-gate MOSFETs IEEE of EDSSC (Hong Kong) pp 247-52
19. Pao H C and Sah C T 1966 Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors Solid-State Electron. 9 927-37
20. Brews J R 1978 A charge sheet model of the MOSFET Solid-State Electron. 21 345-52