A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs

Solid-State Electronics

Volumn 50, Issue 3, 2006, Pages 416-421

  He, Jin ^a   Zhang, Xing ^a   Zhang, Ganggang ^a   Chan, Mansun ^b   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Carrier based model; Compact modeling; Device physics; Non charge sheet; Non classical MOSFETs; Surrounding gate MOSFET

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; THREE DIMENSIONAL;

CARRIER-BASED MODEL; COMPACT MODELING; DEVICE PHYSICS; NON-CHARGE-SHEET; NON-CLASSICAL MOSFET; SURROUNDING-GATE MOSFET;

MOSFET DEVICES;

EID: 33646120812     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.01.015     Document Type: Article

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