Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

Journal of Applied Physics

Volumn 96, Issue 3, 2004, Pages 1365-1372

  Duenas S ^a   Castan H ^a   Garcia H ^a   Barbolla, J ^a   Kukli, K ^b,c   Aarik, J ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSITY OF TARTU   (Estonia)

^c UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; COMPUTATIONAL GEOMETRY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC PROPERTIES; ELECTRIC INSULATORS; HEAT TREATMENT; INTERFACES (MATERIALS); INTERFACIAL ENERGY; METALLIZING; PHASE SHIFT;

ATOMIC LAYER DEPOSITION (ALD); CAPACITANCE-VOLTAGE TECHNIQUE; POSTMETALLIZATION ANNEALING; TRAP DISTRIBUTIONS;

METALLIC FILMS;

EID: 4043105438     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767622     Document Type: Article

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