Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 66-70

  Castán, Helena ^a   Dueñas, Salvador ^a   Barbolla, Juan ^a   Del Prado, Álvaro ^b   San Andrés, Enrique ^b   Mártil, Ignacio ^b   González Díaz, Germán ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Conductance transients; DLTS; ECR PECVD; Insulator damage; Interface states; MIS structures; Silicon nitride; Silicon oxynitrldes

Indexed keywords

DIELECTRIC FILMS; DIFFUSION; ELECTRIC CONDUCTANCE; ELECTRON CYCLOTRON RESONANCE; ELECTRONS; INTERFACES (MATERIALS); PASSIVATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SAMPLING;

CONDUCTANCE TRANSIENTS; DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); ECR-PECVD; INSULATOR DAMAGE; INTERFACE STATES; METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES; SILICON OXYNITRIDES;

SILICON NITRIDE;

EID: 1842660078     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.66     Document Type: Article

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