Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 7, 2001, Pages 4479-4484

  Castán, Helena ^a   Dueñas, Salvador ^a   Barbolla, Juan ^a   Blanco, Nieves ^b   Mártil, Ignacio ^b   González Díaz, German ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Conductance transients; DLTS; In0.63Ga0.47As; Insulator damage; Interface states; MIS; Plasma deposition; RTA

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC MATERIALS; ELECTRON CYCLOTRON RESONANCE; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CONDUTANCE TRANSIENT TECHNIQUES;

TERNARY SYSTEMS;

EID: 0035388344     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4479     Document Type: Article

References (24)