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Volumn 281-282, Issue 1-2, 1996, Pages 618-623

C60 single crystal films on GaAs(001) surfaces

Author keywords

Gallium arsenide; Growth; Scanning tunnelling microscopy (STM)

Indexed keywords

FILM GROWTH; FULLERENES; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SUBSTRATES; SURFACES; THREE DIMENSIONAL;

EID: 0030217614     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08710-X     Document Type: Article
Times cited : (21)

References (18)
  • 4
    • 0000912251 scopus 로고
    • D. Chen and D. Sarid, Phys. Rev. B, 49 (1994) 7612; D. Chen, J. Chen and D. Sarid, Phys. Rev. B, 50 (1994) 10905.
    • (1994) Phys. Rev. B , vol.49 , pp. 7612
    • Chen, D.1    Sarid, D.2
  • 5
    • 0003191410 scopus 로고
    • D. Chen and D. Sarid, Phys. Rev. B, 49 (1994) 7612; D. Chen, J. Chen and D. Sarid, Phys. Rev. B, 50 (1994) 10905.
    • (1994) Phys. Rev. B , vol.50 , pp. 10905
    • Chen, D.1    Chen, J.2    Sarid, D.3
  • 13
    • 0041408733 scopus 로고    scopus 로고
    • note
    • -3.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.