X-ray photoelectron spectroscopic studies of sulphur-passivated GaAs surfaces

Surface and Interface Analysis

Volumn 24, Issue 9, 1996, Pages 564-568

  Wang, Xun ^a   Hou, Xiao Yuan ^a   Li, Zhe Shen ^a   Chen, Xi Ying ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMS; COMPOSITION; DURABILITY; GALLIUM; INTERFACES (MATERIALS); PASSIVATION; SUBSTRATES; SULFUR; SURFACE TREATMENT; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

ARSENIC ATOMS; CHEMICAL COMPOSITIONS; GALLIUM ATOMS; LONGEVITY; PASSIVATION FILM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030247191     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(19960916)24:9<564::AID-SIA148>3.0.CO;2-1     Document Type: Article

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