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Surface Science

Volumn 470, Issue 1-2, 2000, Pages

Adsorption of [(tBu)GaS]4 on the GaAs(001)-(4×2) surface

(4) Pelzel, R I a,c Nosho, B Z a,d Fimland, B O b Weinberg, W H a

a University of California (United States)

b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Norway)

c IQE INC (United States)

d NAVAL RESEARCH LABORATORY (United States)

Author keywords

Gallium arsenide; Scanning tunneling microscopy; Sulphur; Surface chemical reaction

Indexed keywords

ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; DISSOCIATION; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SULFUR; SURFACE STRUCTURE; SURFACE TREATMENT;

GALLIUM SULFIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034506692 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(00)00855-4 Document Type: Article

Times cited : (3)

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