Chemical engineering of gallium arsenide surfaces with 4′-methyl-4-mercaptobiphenyl and 4′-hydroxy-4-mercaptobiphenyl monolayers

Journal of Physical Chemistry B

Volumn 107, Issue 42, 2003, Pages 11737-11741

  Adlkofer, K ^a   Shaporenko, A ^b   Zharnikov, M ^c   Grunze, M ^b   Ulman, A ^c   Tanaka, M ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF HEIDELBERG   (Germany)

^c POLYTECHNIC UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTROLYTES; HYDROPHILICITY; HYDROPHOBICITY; MONOLAYERS; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE TOPOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDROXYMERCAPTOBIPHENYL; METHYLMERCAPTOBIPHENYL; SURFACE FREE ENERGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0242406076     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0356719     Document Type: Article

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