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Volumn 82, Issue 7, 2003, Pages 1051-1053

Molecular modification of an ionic semiconductor-metal interface: ZnO/molecule/Au diodes

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; ULTRAHIGH VACUUM; ZINC OXIDE;

EID: 0037450218     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1543638     Document Type: Article
Times cited : (61)

References (24)
  • 2
  • 18
    • 85007649860 scopus 로고    scopus 로고
    • note
    • This is discussed in detail in A. Vilan and D. Cahen (unpublished), based on results from several experiments, including controls. In short, for junctions made by LOFO with slow drying, the relevant dipole moment is the one corresponding to that of molecules, chemisorbed on the free surface. This is so because then over most of the junction area the metal and molecules are separated by an air gap. If, however, the molecules' functional groups and the metal are directly contacting, those groups will influence the metal rather than the remainder of the molecule, thus reversing the dipole moments.
  • 22
    • 0012456513 scopus 로고    scopus 로고
    • for near-identical slopes of the CPDL-dipole moment plots. A direct link to this document may be found in the online article's HTML reference section. The document may also be reached via the EPAPS homepage or from ftp.aip.org in the directory/epaps/. See the EPAPS homepage for more information
    • See EPAPS Document No. E-APPLAB-82-001307 for near-identical slopes of the CPDL-dipole moment plots. A direct link to this document may be found in the online article's HTML reference section. The document may also be reached via the EPAPS homepage (http://www.aip.org/pubservs/epaps.html) or from ftp.aip.org in the directory/epaps/. See the EPAPS homepage for more information.
    • EPAPS Document No. E-APPLAB-82-001307


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.