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Volumn 109, Issue 19, 2005, Pages 9622-9630

Effect of molecular binding to a semiconductor on metal/molecule/ semiconductor junction behavior

Author keywords

[No Author keywords available]

Indexed keywords

METAL-ORGANIC CONTACTS; MOLECULAR BINDING; MOLECULAR DIPOLE; SEMICONDUCTOR JUNCTION BEHAVIOR;

EID: 19944382813     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0504470     Document Type: Article
Times cited : (35)

References (59)
  • 29
    • 19944413444 scopus 로고    scopus 로고
    • note
    • TOF-SIMS measurements show higher surface coverage with dC-X (75-85%) than with dS-X (40-45%) molecules on the n-GaAs substrate used here.
  • 30
    • 19944368887 scopus 로고    scopus 로고
    • note
    • The plots do not cross the (0,0) point, something that cannot be explained by the different bond polarities (As-S, Ga-O) of the actual binding groups. It may be due to oxide and/or hydroxide binding (due to exposure to the ambient) to those surface atoms that are not involved in the molecular binding, namely, the Ga and the As ones, respectively. For example, one can argue that the (residual) As-O bond (after dC-X binding to Ga) is less polar than the Ga-0 one (after dS-X binding to As).
  • 32
    • 19944422887 scopus 로고    scopus 로고
    • note
    • Δø = Δχ if the band bending remains constant.
  • 36
    • 19944362302 scopus 로고    scopus 로고
    • note
    • These values can be compared with those found for Au/dC-X/ GaAs junctions, where the Au contacts were prepared by another soft contacting method, lift-off, float-on (LOFO), which gave γ = 0.1 and γ = 0.55 for n- andp-GaAs (cf. ref 19), and for Au/dC-XM-ZnO (LOFO) ones, which gave also γ = 0.55 (cf. ref 15). In all these cases, Δχ, the change in electron affinity upon molecule adsorption, was comparable to that obtained here with the dC-X molecules.
  • 37
    • 19944425624 scopus 로고    scopus 로고
    • J. Ph.D. Thesis, Weizmann Institute of Science
    • Ghabboun, J. Ph.D. Thesis, Weizmann Institute of Science, 2004.
    • (2004)
    • Ghabboun1
  • 46
    • 19944384704 scopus 로고    scopus 로고
    • note
    • 16) thiol monolayers were adsorbed on Au substrates and contacted by indirect evaporation of Au and Pd. The resulting junctions show ∼20% larger number of short-circuits for Au contacts than for Pd ones (cf. ref 20). This is explained by the different mechanism by which Pd grows on the molecules, which will limit metal penetration between the molecular chains. We attribute the higher probability of shorts with Au to the generation of conductive, metallic wires between the molecules' chains, in addition to the metals filling the larger pinholes that will be present in such films.
  • 48
    • 19944365342 scopus 로고    scopus 로고
    • note
    • Similar SEM experiments with Pd show no significant differences in terms of the metal film growth on the molecules, between those with dC-X binding groups and those with dS-X ones, a finding that is consistent with the two-dimensional growth of Pd (cf. refs 49 and 50 below).
  • 52
    • 19944386057 scopus 로고    scopus 로고
    • note
    • In the absence of the chemical driving force that stabilizes the deposited Au atoms/clusters on the surface of the molecular film, small clusters on top of the monolayer become unstable. As a result, they diffuse, on the monolayer surface, and coalesce into larger, stable clusters, growing in and out of the pinholes. If these are sufficiently close together, these coalesce to form elongated Au islands.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.