Frontier orbital model of semiconductor surface passivation: Dicarboxylic acids on n- and p-GaAs

Advanced Materials

Volumn 12, Issue 1, 2000, Pages 33-37

  Cohen, Rami ^a   Kronik, Leeor ^a,b   Vilan, Ayelet ^a   Shanzer, Abraham ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBOXYLIC ACIDS; ELECTRON ENERGY LEVELS; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; PASSIVATION; SURFACE TREATMENT;

HIGHEST OCCUPIED MOLECULAR ORBITALS (HOMO); LOWEST UNOCCUPIED MOLECULAR ORBITALS (LUMO);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033875845     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4095(200001)12:1<33::AID-ADMA33>3.0.CO;2-B     Document Type: Article

References (29)

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