Controlled modulation of conductance in silicon devices by molecular monolayers

Journal of the American Chemical Society

Volumn 128, Issue 45, 2006, Pages 14537-14541

  He, Tao ^a   He, Jianli ^a   Lu, Meng ^a   Chen, Bo ^a   Pang, Harry ^a   Reus, William F ^a   Nolte, Whitney M ^a   Nackashi, David P ^b   Franzon, Paul D ^b   Tour, James M ^a  

^a RICE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; GRAFTING (CHEMICAL); MONOLAYERS; SILICON; THRESHOLD VOLTAGE;

ELECTRON ACCEPTORS; ELECTRON DONATING ABILITY; GRAFTING PROTOCOL; SILICON DEVICES;

MOSFET DEVICES;

METAL OXIDE; SILICON;

ARTICLE; CONDUCTANCE; COVALENT BOND; DEVICE; DIELECTRIC CONSTANT; DIPOLE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; MATERIALS; MATERIALS TESTING; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; SEMICONDUCTOR;

EID: 33750978435     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja063571l     Document Type: Article

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