Quantifying self-heating effects with scaling in globally strained Si MOSFETs

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1473-1478

  Agaiby, Rimoon ^a   Yang, Yang ^a   Olsen, Sarah H ^a   O'Neill, Anthony G ^a   Eneman, Geert ^b,c,d   Verheyen, Peter ^b   Loo, Roger ^b   Claeys, Cor ^b,c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d NONE

Author keywords

Ac conductance; Scaling; Self heating; Strain relaxed buffers; Strained Si; Thermal resistance

Indexed keywords

FABRICATION; GERMANIUM; HEAT RESISTANCE; SCALABILITY; SILICON;

SELF-HEATING EFFECTS; STRAIN RELAXED BUFFERS; STRAINED SI;

SOLID STATE PHYSICS;

EID: 36249001168     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.012     Document Type: Article

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