Measurement and modeling of self-heating effects in SOI nMOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 357-360

  Su, L T ^a   Goodson, K E ^a   Antoniadis, D A ^a   Flik, M I ^a   Chung, J E ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; MOSFET DEVICES; SILICON COMPOUNDS;

BURIED OXIDE THICKNESS; CIRCUIT PARAMETER; DEVICE CHARACTERIZATION; DYNAMIC OPERATIONS; MEASURED TEMPERATURES; OPERATING CONDITION; SELF-HEATING EFFECT; SILICON THICKNESS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 85006867730     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307377     Document Type: Conference Paper

References (10)

1. L. J. McDaid et al., Proc. European Solid State Device Research Conf. (ESSDERC), pp. 885-889, 1989.
2. K. E. Goodson and M. I. Flik, Proc. Third Inter society Conf. on Thermal Phenomena in Electronic Systems, pp. 122-126, 1992.
3. H. Lifka and P. H. Woerlee, Proc. European Solid State Device Research Conf. (ESSDERC), pp. 453-456, 1990.
4. L. J. McDaid et al., Proc. IEEE SOIISOS Technical Conference, pp. 28-29. 1991.
5. M. Berger and Z. Chai, IEEE Trans, on Electron Devices, vol. 38, pp. 781-875, April 1991.
6. N. Yasuda et al., Japanese Journal of Applied Physics, vol. 30, pp. 3677-3684, 1991.
7. M. Koyanagi et al., Proc. Device Research Conference, 1992.
8. P. G. Mautry and J. Trager, Proc. IEEE 1990 Int. Conf. on Microelectronic Test Structures, vol. 3, pp. 221-226, 1990.
9. A. Sugawara, Physica, Vol. 41, pp. 515-520, 1969.
10. Y. S. Touloukian, R. W. Powell, C. Y. Ho, P. G. Kkmens, in Thermophysical Properties of Matter, Vol. 1, 1970, Plenum, New York, pp. 326-339.