Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: Effect of reduced self-heating on DC and RF performance

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1921-1925

  Hackbarth, T ^a   Herzog, H J ^a   Hieber, K H ^a   Konig U ^a   Mantl, S ^b   Hollander B ^b   Lenk, St ^b   Von Kanel H ^c   Enciso, M ^d   Aniel, F ^d   Giguerre, L ^d  

^a DAIMLER AG   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c POLITECNICO DI MILANO   (Italy)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BANDWIDTH; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; FREQUENCIES; FREQUENCY MODULATION; HELIUM; HETEROJUNCTIONS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO FREQUENCY AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; THERMAL CONDUCTIVITY OF SOLIDS; THYRISTORS;

RADIO FREQUENCIES (RF); RAPID THERMAL ANNEALING (RTA); STRAIN RELIEVED BUFFER (SRB); VIRTUAL SUBSTRATES (VS);

FIELD EFFECT TRANSISTORS;

EID: 3142772953     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.037     Document Type: Conference Paper

References (10)

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