New virtual substrate concept for vertical MOS transistors

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 319-322

  Kasper, Erich ^a   Lyutovich, Klara ^a   Bauer, Matthias ^a   Oehme, Michael ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Ion bombardment; Point defects; Thin relaxed SiGe buffer layer; Threading dislocations; Very low temperature growth; Virtual substrate

Indexed keywords

CONDENSATION; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

BURGERS VECTORS; SILICON GERMANIUM;

MOSFET DEVICES;

EID: 0032318730     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01317-0     Document Type: Article

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