Threshold-voltage control of AC performance degradation-free FD SOI MOSFET With extremely thin BOX using variable body-factor scheme

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 301-307

  Ohtou, Tetsu ^a   Yokoyama, Kouki ^a,b   Shimizu, Ken ^a   Nagumo, Toshiharu ^b,c   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b CHUO UNIVERSITY   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

Back bias; Body bias; Fully depleted silicon on insulator (SOI) MOSFET; Interdie variation; Thin buried oxide (BOX); VTCMOS

Indexed keywords

ASPECT RATIO; DEGRADATION; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

BACK BIAS; BODY BIAS; FULLY DEPLETED SILICON-ON-INSULATOR (SOI) MOSFET; INTERDIE VARIATION; THIN BURIED-OXIDE;

MOSFET DEVICES;

EID: 33847659111     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888728     Document Type: Article

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