New experimental findings on the enhanced MOSFET degradation at elevated temperature

IEEE Region 10 Annual International Conference, Proceedings/TENCON

Volumn 2, Issue , 1999, Pages 1113-1116

  Hong, S H ^a   Nam, S M ^a   Yu, C G ^a   Jeon, S H ^a   Park, J T ^a  

^a SolarLight Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; HOT ELECTRONS; IMPACT IONIZATION; TEMPERATURE DISTRIBUTION;

CRITICAL ENERGY; DEVICE DEGRADATION; ELEVATED TEMPERATURE; GATE BIAS; LUCKY ELECTRON MODEL; MOSFET DEGRADATION; SUBSTRATE CURRENT; TEMPERATURE DEPENDENCE;

MOSFET DEVICES;

EID: 84886697001     PISSN: 21593442     EISSN: 21593450     Source Type: Conference Proceeding    
DOI: 10.1109/TENCON.1999.818619     Document Type: Conference Paper

References (8)

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