Thick-strained-Si/relaxed-SiGe structure of high-performance RF power LDMOSFETs for cellular handsets

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3136-3144

  Kondo, Masao ^a,b   Sugii, Nobuyuki ^c   Hoshino, Yutaka ^b   Hirasawa, Wataru ^d   Kimura, Yoshinobu ^c   Miyamoto, Masafumi ^c   Fujioka, Toru ^b   Kamohara, Shiro ^a,c   Kondo, Yasuichi ^b   Kimura, Shin'ichiro ^a,c   Yoshida, Isao ^a,b  

^a IEEE   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c HITACHI LTD   (Japan)

^d Renesas Eastern Japan Semiconductor Inc   (Japan)

Author keywords

Laterally diffused MOSFETs (LDMOSFETs); Misfit dislocations; Power amplifiers; SiGe; Strained silicon

Indexed keywords

LATERALLY DIFFUSED MOSFETS (LDMOSFETS); SIGE; STRAINED SILICON; THERMAL SIMULATION;

CODE DIVISION MULTIPLE ACCESS; DISLOCATIONS (CRYSTALS); LEAKAGE CURRENTS; MOBILE DEVICES; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS;

MOSFET DEVICES;

EID: 33947248577     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885669     Document Type: Article

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