Long-wavelength (1.3 -1.5 micron) quantum dot lasers based on GaAs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5349, Issue , 2004, Pages 31-45

  Kovsh, A R ^a,b,c   Ledentsov, N N ^a,b,d   Mikhrin, S S ^a,b   Zhukov, A E ^b   Livshits, D A ^b,c   Maleev, N A ^b,c   Maximov, M V ^b   Ustinov, V M ^b   Gubenko, A E ^b   Gadjiev, I M ^b   Portnoi, E L ^b   Wang, J S ^c   Chi, J ^c   Ouyang, D ^d   Bimberg, D ^d   Lott, J A ^e  

^a NSC Nanosemiconductor GmbH   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^e AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Beam quality; Diode lasers; Quantum dots; Short pulses; Vertically surface emitting lasers

Indexed keywords

COSTS; CURRENT DENSITY; DEPOSITION; GALLIUM COMPOUNDS; HETEROJUNCTIONS; LASER MODE LOCKING; LASER PULSES; MOLECULAR BEAM EPITAXY; NONLINEAR SYSTEMS; OPTIMIZATION; SEMICONDUCTOR QUANTUM DOTS; SENSITIVITY ANALYSIS;

BEAM QUALITY; LONG-WAVELENGTHS; SHORT PULSES; VERTICALLY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 3543070537     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.531245     Document Type: Conference Paper

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