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Volumn 37, Issue 3, 2001, Pages 174-175

Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; PROTON IRRADIATION; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

EID: 0034825014     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010118     Document Type: Article
Times cited : (71)

References (9)
  • 2
    • 0001533715 scopus 로고    scopus 로고
    • Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
    • ELISEEV, P.G., STINTZ, A., LI, H., LIU, G.T., NEWELL, T.C., MALLOY. K.J., and LESTER. L.F.: 'Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes', Appl. Phys. Lett., 2000, 77, pp. 262-264
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 262-264
    • Eliseev, P.G.1    Stintz, A.2    Li, H.3    Liu, G.T.4    Newell, T.C.5    Malloy, K.J.6    Lester, L.F.7
  • 4
    • 0032620877 scopus 로고    scopus 로고
    • Design parameters for lateral carrier confinement in quantum-dot lasers
    • KIM, J.K., STRAND, T.A., NAONE, R.L., and COLDREN. L.A.: 'Design parameters for lateral carrier confinement in quantum-dot lasers', Appl. Phys. Lett., 1999, 74, pp. 2752-2754
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 2752-2754
    • Kim, J.K.1    Strand, T.A.2    Naone, R.L.3    Coldren, L.A.4
  • 5
    • 0024104046 scopus 로고
    • The space radiation environment for electronics
    • STASSINOPOULOS, E.G., and RAYMOND, J.p.: 'The space radiation environment for electronics', Proc. IEEE, 1988, 76, pp. 1423-1442
    • (1988) Proc. IEEE , vol.76 , pp. 1423-1442
    • Stassinopoulos, E.G.1    Raymond, J.P.2
  • 6
    • 0000270045 scopus 로고    scopus 로고
    • Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
    • LEON, R., SWIFT, G.M., MAGNESS, B., TAYLOR, W.A., TANG, Y.S., WANG, K.L., DOWD, P., and ZHANG, Y.H.: 'Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots'. Appl. Phys. Lett., 2000, 76, pp. 2074-2076
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 2074-2076
    • Leon, R.1    Swift, G.M.2    Magness, B.3    Taylor, W.A.4    Tang, Y.S.5    Wang, K.L.6    Dowd, P.7    Zhang, Y.H.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.