Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 648-657

  Bhattacharyya, D ^a   Avrutin, E A ^a   Bryce, A C ^a   Marsh, J H ^a   Bimberg, D ^b   Heinrichsdorff, F ^b   Ustinov, V M ^c   Zaitsev, S V ^c   Ledentsov, N N ^c   Kop'ev, P S ^c   Alferov, Zh I ^c   Onischenko, A I ^d   O'Reilly, E P ^d  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

^d UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; DYNAMICS; ELECTRON ENERGY LEVELS; LASER MODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; WAVEGUIDES;

CARRIER LOCALIZATION EFFECTS; GROUPING EFFECT; LASING SPECTRUM; OPTICAL NONLINEARITIES; QUASIPERIODIC MODULATION; RATE EQUATION SIMULATION; SEMICONDUCTING INDIUM ARSENIDE; SPECTRAL PROPERTIES; WAVELENGTH DEPENDENT LOSSES;

SEMICONDUCTOR LASERS;

EID: 0033123881     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788431     Document Type: Article

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