Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 3, 2000, Pages 544-551

  Borri, P ^a   Langbein, W ^b   Hvam, J M ^a   Heinrichsdorff, F ^c   Mao, M H ^c   Bimberg, Dieter ^c  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b TU DORTMUND UNIVERSITY   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; GAIN MEASUREMENT; OPTICS; PUMPING (LASER); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; ULTRAFAST PHENOMENA;

CARRIER HEATING DYNAMICS; QUANTUM DOT AMPLIFIERS; SPECTRAL HOLE BURNING; ULTRAFAST GAIN;

SEMICONDUCTOR LASERS;

EID: 0034187523     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.865110     Document Type: Article

References (40)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures. New York: Wiley, 1998.
2. N. N. Ledentsov, V. A. Shchukin, M. Grundmann, N. Kirstaedter, J. Bbhrer, O. Schmidt, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, S. V. Zaitsev, N. Yu. Gordeev, Zh. I. Alferov, A. I. Borokov, A. O. Kosogov, S. S. Ruvimov, P. Werner, U. Gösele, and J. Heydenreich, "Direct formation of vertically coupled quantum dots in stranski-krastanov growth," Phys. Rev. B, vol. 54, pp. 8743-8750, 1996.
3. F. Heinrichsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov, and P. Werner, "Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 71, pp. 22-24, 1997.
4. M.-H. Mao, F. Heinrichsdorff, A. Krost, and D. Bimberg, "Study of high frequency response of self-organized stacked quantum dot lasers at room temperature," Electron. Lett., vol. 33, pp. 1641-1642, 1997.
5. K. Mukai, Y. Nakata, H. Shoji, M. Sugawara, K. Ohtsubo, N. Yokoyama, and H. Ishikawa, "Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots," Electron. Lett., vol. 34, pp. 1588-1590, 1998.
6. 0.85As quantum wells," Electron. Lett., vol. 35, pp. 1163-1165, 1999.
7. F. Schäfer, J. P. Reithmaier, and A. Forchel, "High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer," Appl. Phys. Lett., vol. 74, pp. 2915-2917, 1999.
8. J. Bloch, J. Shah, W. S. Hobson, J. Lopata, and S. N. G. Chu, "Room-temperature 1.3μm emission from InAs quantum dots grown by metal organic chemical vapor deposition," Appl. Phys. Lett., vol. 75, pp. 2199-2201, 1999.
9. 0.8As grown on GaAs substrate," Appl. Phys. Lett., vol. 74, pp. 1111-1113, 1999.
10. D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3μm room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett., vol. 73, pp. 2564-2566, 1998.
11. A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg, "Long-wavelength lasing from multiply stacked InAs/In-GaAs quantum dots on GaAs substrates," Appl. Phys. Lett., vol. 75, pp. 1926-1928, 1999.
12. Yu. M. Shernyakov, E. Y. Kondrat'eva, D. A. Bedarev, P. S. Kop'ev, A. R. Kovsh, N. A. Maleev, M. V. Maximov, S. S. Mikhrin, A. F. Tsatsul'nikov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, "1.3μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition," Electron. Lett., vol. 35, pp. 898-900, 1999.
13. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, "1.3μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA," IEEE Photon. Technol. Lett., vol. 11, pp. 1205-1207, 1999.
14. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Z. I. Alferov, P. S. Kop'ev, and V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Select. Topics Quantum Elect., vol. 3, pp. 196-205, 1997.
15. 0.6As/GaAs self-organized quantum dot lasers at cryogenic temperature: Role of carrier relaxation and differential gain," IEEE Photon. Technol. Lett., vol. 10, pp. 932-934, 1998.
16. 0.6As/GaAs quantum dots characterized by differential transmission spectroscopy," Phys. Rev. B, vol. 57, pp. R9423-R9426, 1998.
17. S. Raymond, X. Guo, J. L. Merz, and S. Fafard, "Excited-state radiative lifetime in self-assembled quantum dots obtained from state-filling spectroscopy," Phys. Rev. B, vol. 59, pp. 7624-7631, 1999.
18. W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, "Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots," Phys. Rev. B, vol. 56, pp. 13,314-13,320, 1997.
19. R. Heitz, M. Veit, N. N. Ledentsov, A. Hoffmann, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, "Energy relaxation by multiphonon processes in InAs/GaAs quantum dots," Phys. Rev. B, vol. 56, pp. 10,435-10,445, 1997.
20. C. T. Hultgren and E. P. Ippen, "Ultrufast refractive index dynamics in AlGaAs diode laser amplifiers," Appl. Phys. Lett., vol. 59, pp. 635-637, 1991.
21. K. L. Hall, G. Lenz, E. P. Ippen, and G. Raybon, "Heterodyne pump-probe technique for time domain studies of optical nonlinearities in waveguides," Opt. Lett., vol. 17, pp. 874-876, 1992.
22. J. Mark and J. Mørk, "Subpicosecond gain dynamics in InGaAsP optical amplifiers: Experiment and theory," Appl. Phys. Lett., vol. 61, pp. 2281-2283, 1992.
23. J. Mørk, J. Mark, and C. P. Seltzer, "Carrier heating in InGaAsP laser amplifiers due to two-photon absorption," Appl. Phys. Lett., vol. 64, pp. 2206-2208, 1994.
24. K. L. Hall, G. Lenz, A. M. Darwish, and E. P. Ippen, "Subpicosecond gain and index nonlinearities in InGaAsP diode lasers," Opt. Commun., vol. 111, pp. 589-612, 1994.
25. C.-K. Sun, B. Golubovic, H.-K. Choi, C. A. Wang, and J. G. Fujimoto, "Femtosecond investigations of spectral hole burning in semiconductor lasers," Appl. Phys. Lett., vol. 66, pp. 1650-1652, 1995.
26. C.-K. Sun, B. Golubovic, J. G. Fujimoto, H. K. Choi, and C. A. Wang, "Heterodyne nondegenerate pump-probe measurement technique for guided-wave devices," Opt. Lett., vol. 20, pp. 210-212, 1995.
27. J. Mørk, A. Mecozzi, and C. Hultgren, "Spectral effects in short pulse pump-probe measurements," Appl. Phys. Lett., vol. 68, p. 449, 1996.
28. F. Heinrichsdorff, "MOCVD growth and laser applications of In(Ga)As/GaAs quantum dots," Ph.D. dissertation, Insitut für Festkörperphysik, Technische Universität Berlin, Germany, 1997.
29. P. Borri, W. Langbein, J. Mørk, and J. M. Hvam, "Heterodyne pump-probe and four-wave mixing in semiconductor optical amplifiers using balanced lock-in detection," Opt. Commun., vol. 169, pp. 317-324, 1999.
30. A. Schönfelder, S. Weisser, J. D. Ralston, and J. Rosenzweig, "Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers: Influence of strain and p-doping," IEEE Photon. Technol. Lett., vol. 6, pp. 891-893, 1994.
31. C. M. A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N. D. Zakharov, D. Bimberg, and P. Werner, "Electron escape from InAs quantum dots," Phys. Rev. B, vol. 60, pp. 14,265-14,268, 1999.
32. J. Mørk and A. Mecozzi, "Theory of the ultrafast optical response of active semiconductor waveguides," J. Opt. Soc. Amer. B, vol. 13, pp. 1803-1816, 1996.
33. M. Grundmann and D. Bimberg, "Gain and treshold of quantum dot lasers: Theory and comparison to experiments," Jpn. J. Appl. Phys., vol. 36, pp. 36-42, 1997.
34. A. Mecozzi and J. Mørk, "Theory of heterodyne pump-probe experiments with femtosecond pulses," J. Opt. Soc. Amer. B, vol. 13, pp. 2437-2452, 1996.
35. R. Ferreira and G. Bastard, "Phononassisted capture and intradot auger relaxation in quantum dots." Appl. Phys. Lett., vol. 74. pp. 2818-2820, 1999.
36. J. L. Pan, "Intraband auger processes and simple models of the ionization balance in semiconductor quantum-dot lasers," Phys. Rev. B, vol. 49, pp. 11,272-11,287, 1994.
37. P. Borri, W. Langbein, J. Mørk, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg, "Dephasing in InAs/GaAs quantum dots," Phys. Rev. B. vol. 60, pp. 7784-7787, 1999.
38. P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg, "Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection," Appl. Phys. Lett., vol. 76, pp. 1380-1382, 2000.
39. M. Sugawara, K. Mukai, and Y. Nakata, "Light emission spectra of columnar-shaped self assembled InGaAs/GaAs quantum dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics," Appl. Phys. Lett., vol. 74, pp. 1561-1563, 1999.
40. D. Bimberg and J. Mycielski, "Recombination-induced heating of free carriers in a semiconductor," Phys. Rev. B. vol. 31, pp. 5490-5493, 1985.