Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 3, 2000, Pages 452-461

  Huffaker, Diana L ^a   Park, G ^a   Zhengzhong, Zou ^a   Shchekin, O B ^a   Deppe, Dennis G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; ELECTRIC CURRENTS; HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

CONTINUOUS WAVE; QUANTUM DOT LASERS; SUBMONOLAYER DEPOSITIONS; THRESHOLD CURRENT DENSITY; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0034187124     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.865100     Document Type: Article

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