The differential efficiency of quantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 491-498

  Smowton, Peter M ^a,b,c,d   Blood, Peter ^{a,d,e,f,g,h,i}  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF WALES   (United Kingdom)

^c Cardiff III V Microlectron Center   (United Kingdom)

^d Institute of Physics   (United Kingdom)

^e UNIVERSITY OF LEEDS   (United Kingdom)

^f PHILIPS RESEARCH LABORATORIES   (Netherlands)

^g LUCENT TECHNOLOGIES   (United States)

^h OPTICAL SOCIETY OF AMERICA   (United States)

ⁱ IEEE

Author keywords

Quantum efficiency; Quantum well lasers; Spontaneous emission

Indexed keywords

CHARGE CARRIERS; EMISSION SPECTROSCOPY; LIGHT EMISSION; LIGHT MEASUREMENT; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

SPONTANEOUS EMISSION MEASUREMENTS;

QUANTUM WELL LASERS;

EID: 0031109229     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605699     Document Type: Article

References (14)

1. J. R. Biard, W. N. Carr, and B. S. Reed, "Analysis of a GaAs laser," Trans. AIME, vol. 230, pp. 286-290. 1964.
2. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers. Part A: Fundamental Principles. San Diego, CA: Academic, 1978.
3. D. P. Bour, D. W. Treat, K. J. Beernink, R. S. Krusor, R. S. Geels, and D. F. Welch, "610nm band AIGaInP single quantum well laser diode," IEEE Photon. Technol. Lett., vol. 6, pp. 128-131, Feb. 1994
4. 0.5 P heterostructures and quantum well laser diodes," IEEE J. Quantum Electron., vol. 30, pp. 593-606, Feb. 1994.
5. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers. New York: Van Nostrand Reinhold, 1993.
6. P. Blood, "Heterostructures in semiconductor lasers," in Physics and Technology of Heterostructure Devices, D. V. Morgan and R. H. Williams, Eds. London, U.K.: Peter Peregrinus, 1990.
7. F. R. Nash and R. L. Hartman, "Facet oxide formation and degradation of GaAs lasers," J. Appl. Phys., vol. 50, no. 5, pp. 3133-3141, 1979.
8. P. Blood, A. I. Kucharska, J. P. Jacobs, and K. Griffiths, "Measurement and calculation of spontaneous recombination current and optical gain in GaAs-AlGaAs quantum well lasers," J. Appl. Phys., vol. 70, no. 3, pp. 1144-1156, 1991.
9. 1-y)InP 670nm quantum well lasers for high temperature operation," IEEE J. Quantum Electron., vol. 31, pp. 2159-2164, Dec. 1995.
10. P. Blood, E. D. Fletcher, K. Woodbridge, K. C. Heasman, and A. R. Adams, "Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers," IEEE J. Quantum Electron., vol. 25, pp. 1459-1468, June 1989.
11. B. Hakki, "GaAs double heterostructure lasing behavior along the junction plane," J. Appl. Phys., vol. 46, no. 1, pp. 292-302, 1975.
12. H. Hirayama, J. Yoshida, Y. Miyake, and M. Asada, "Estimation of carrier capture time of quantum well lasers by spontaneous emission measurements," Appl. Phys. Lett., vol. 61, no. 20, pp. 2398-2400, 1992.
13. N. Tessler, R. Nagar, G. Eisenstein, S. Chandrasekhar, C. H. Joyner, A. G. Dentai, U. Koren, and G. Raybon, "Nonequilibrium effects in quantum well lasers," Appl. Phys. Lett., vol. 61, no. 20, pp. 2383-2385, 1992.
14. M. P. Kessler, C. S. Harder, and E. E. Latta, "Carrier heating in AlGaAs single quantum well laser diodes," Appl. Phys. Lett., vol 59, no. 22, pp. 2775-2777, 1991.