Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

IEEE Photonics Technology Letters

Volumn 11, Issue 8, 1999, Pages 931-933

  Lester, L F ^a   Stintz, A ^a   Li, H ^a   Newell, T C ^a   Pease, E A ^a   Fuchs, B A ^a   Malloy, K J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; GAIN MEASUREMENT; GROUND STATE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS;

INDIUM ARSENIDE; ROOM TEMPERATURE THRESHOLD CURRENT DENSITIES; SATURATED MODAL GAIN;

SEMICONDUCTOR LASERS;

EID: 0032632767     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.775303     Document Type: Article

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