Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1887-1889

  Gong, Q ^a   Notzel R ^a   Hamhuis, G J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; GAAS; LAYER THICKNESS; PHOTOLUMINESCENCE LINES; SHORT PERIODS; SINGLE LAYER; SUPERLATTICE PERIODS;

GALLIUM; SUPERLATTICES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79956002919     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506780     Document Type: Article

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