High performance narrow stripe quantum-dot lasers with etched waveguide

Semiconductor Science and Technology

Volumn 18, Issue 12, 2003, Pages

  Ouyang, D ^a   Ledentsov, N N ^a   Bimberg, D ^a   Kovsh, A R ^b   Zhukov, A E ^b   Mikhrin, S S ^b   Ustinov, V M ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DISTRIBUTED FEEDBACK LASERS; ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; WAVEGUIDES;

ETCHED WAVEGUIDE; NARROW STRIPE QUANTUM-DOT LASERS; PHOTONIC CRYSTAL QUANTUM-DOT DEVICES; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0346361586     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/12/101     Document Type: Letter

References (10)

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