Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1117-1120

  Kovsh, A R ^a   Zhukov, A E ^a   Egorov, A Yu ^a   Ustinov, V M ^a   Shernyakov, Yu M ^a   Maximov, M V ^a   Volovik, V V ^a   Tsatsul'nikov, A F ^a   Musikhin, Yu V ^a   Ledentsov, N N ^a   Kop'ev, P S ^a   Bimberg, D ^b   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; INJECTION LASERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

MODAL GAIN; SELF-ORGANIZED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032638485     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01538-3     Document Type: Article

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