Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

IEEE Journal of Quantum Electronics

Volumn 37, Issue 5, 2001, Pages 676-683

  Maximov, M V ^a,b   Asryan, L V ^b,c   Shernyakov, Yu M ^b   Tsatsul'nikov, A F ^b   Kaiander, I N ^b   Nikolaev, V V ^b   Kovsh, A R ^b   Mikhrin, S S ^b   Ustinov, V M ^b   Zhukov, A E ^b   Alferov, Zh I ^b   Ledenstov, N N ^a,b   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c STONY BROOK UNIVERSITY   (United States)

Author keywords

1.3 m emitting lasers; Quantum dots; Quantum well lasers; Semiconductor heterojunctions

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; GAIN CONTROL; GROUND STATE; HETEROJUNCTIONS; INJECTION LASERS; OPTICAL WAVEGUIDES; PHASE SEPARATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

LONG WAVELENGTH LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035338667     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.918581     Document Type: Article

References (31)